single wafer
英 [ˈsɪŋɡl ˈweɪfə(r)]
美 [ˈsɪŋɡl ˈweɪfər]
网络 单晶圆清洗; 单晶圆式; 半导体单晶圆; 单片式
双语例句
- Study on the Machining Performance of Single Crystal Silicon Wafer Cut by Using Reciprocating Electroplated Diamond Wire Saw Characteristic of Material Removal in Chemical Mechanical Polishing of Silicon Wafer Based on Abrasion Behavior
往复式电镀金刚石线锯切割单晶硅片特性研究基于磨损行为的单晶硅片化学机械抛光材料的去除特性 - Study on the Influence of Magnetism of Synthetic Diamond Single Crystal on Their Mechanical Performances Study on the Machining Performance of Single Crystal Silicon Wafer Cut by Using Reciprocating Electroplated Diamond Wire Saw
磁性对人造金刚石单晶机械性能的影响往复式电镀金刚石线锯切割单晶硅片特性研究 - Single wafer plasma system
单晶片处理式等离子装置 - Because of the reflection on the back surface the minority carrier generation and illuminated surface photovoltage of both sides polished wafer will be higher than one of single side polished wafer.
由于背抛光面对受光面入射光的反射，使得少子产生率和受光面表面光电压都高于单面抛光片。 - Effect of sodium silicate on texture of single crystalline silicon wafer for solar cell
硅酸钠在太阳能电池单晶硅表面织构化的作用 - XPS and EIA Studies of Site-directed Immobilization of IgG Molecules onto Single Crystal Silicon Wafer Surfaces
IgG分子在单晶硅片表面导向性固定的XPS和EIA研究 - A line-focus probe with a single long wafer has been designed to improve the efficiency and a microcomputer-based automatic system is used to perform intelligent control and to improve the reliability.
同时，设计了一套单长晶片线聚焦探头以克服检测效率低的缺点，用微机自动检测系统进行智能化控制来提高检测的可靠性。 - There exist reliability issues dealing with the protection of front side and back side of the chip when using single chip packaging method. It is pointed out that wafer level packaging is better than single chip packaging method for protection of chip.
高量程加速度计采用单芯片封装方法时，存在芯片正面和背面保护的可靠性问题，更好的封装方法是采用圆片级封装。 - However, concerns about cycle time are driving develop-ment of single wafer cleaning processes.
但是，对周期时间的关注推动了单晶圆清洗工艺的开发。 - Finally, epi-ready InP polished single crystal wafer with high lattice perfection, free of surface damage, is obtained.
在此基础上获得了开盒即用（EPI-READY）、具有良好晶格完整性、表面无损伤的InP单晶衬底抛光片。 - In this paper, the oriented growth of the CaF 2 single crystal on the silicon wafer with LB monolayer was investigated through a series of technology such as SEM, XRD.
实验中利用SEM，XRD等手段研究了转移到硅基底上的LB膜诱导氟化钙单晶的生长情况。 - This paper presented one single chip micro inertial measurement unit based on ordinary bulk micromachining process such as dissolved wafer process.
论文基于普通的体硅工艺设计实现了一个单片集成式硅微惯性测量组合。 - In order to decrease cut difficult, single crystal may be grown with inversely deviating seed and keep wafer cut from this ingot to reach Φ 2 ″ in diameter, the height of cross section of ingot should be increased.
为了减少切割难度，可生长反偏籽晶的单晶，但要保证单晶能割出Φ2〃（100）圆片，必须增加单晶锭的截面积。 - The results show that thermal stress leads to high density of dislocations because of plastic deformation in the region of GaAs single crystal wafer contacted with graphite.
结果表明：在高温退火条件下，GaAs晶体与石墨接触区域散热不均匀造成的热应力，致使该区域范性形变，从而产生高密度的位错。 - The surface component of silicon wafer ground with soft abrasive grinding wheel was inspected and the chemical reaction between abrasives, additives and single crystal silicon was analyzed. The material removal model in silicon wafer grinding with soft abrasive grinding wheel was established.
通过检测软磨料砂轮磨削硅片表面的化学成分分析了磨料、单晶硅和添加剂之间在磨削过程中发生的化学反应，建立了软磨料砂轮磨削硅片的材料去除机理模型。 - Owing to high hardness and brittleness of SiC single crystal which has a good chemical stability, it is the critical issue that must be solved in its extensive application to obtain a wafer surface which is super smooth and free of scratch.
由于SiC单晶材料的硬度及脆性大，且化学稳定性好，故如何获得超平滑无损伤晶片表面已成为其广泛应用所必须解决的重要问题。 - According to using range of temperature and the PH of colloidal silica slurry in CMP process, increasing the values is beneficial to enhance the chemical removal for mechanical polished SiC single crystal wafer.
对机械抛光的晶片进行CMP加工应该根据胶体二氧化硅抛光液的PH值与温度使用范围，适当提高它们有利于增加化学去除作用。 - The phase transformation of the monocrystalline silicon during grinding is analyzed as well. ( 3) The residual stress distributions of single diamond grit ground and diamond wheel ground wafer surface layer are studied.
对单颗磨粒磨削硅片和金刚石砂轮磨削硅片表面层残余应力的分布进行了研究，分析了残余应力的产生原因。 - Therefor, it has higher practical value to research the processing and characterization techniques for polished SiC single crystal wafer.
为此，研究SiC单晶抛光片的加工技术和表面质量的表征方法具有较高的实用价值。 - The rational mask layouts are selected according to the feature size and the phase map of diffractive elements. For diffractive objective lens, a single step electron beam photolithography has been used so as to meet the fineness requirements of micro-nano-structures formed over the surface of silicon wafer.
在光刻时，根据所制衍射微光学元件特征尺寸的大小，合理选择光刻的方式。对红光高清衍射物镜，采用了单步电子束光刻的方法，以适应其表面处的精细图形结构。 - Cutting, lapping and polishing which are the key technical barriers must be broken through to manufacture perfect silicon carbide single crystal wafer.
通过分析，要制备出完美的单晶抛光片，必须突破加工的关键技术。 - Single crystal silicon wafer has been widely used in the semiconductor industry, as the basic substrate material for the integrated circuits. Ultra-precision grinding technology is the core technology of a semiconductor chip substrate planarization processing and back thinned processing.
单晶硅是优良的衬底材料，被广泛应用于半导体产业中，超精密磨削技术是半导体芯片衬底平坦化加工和背面减薄加工的核心技术。 - FZ Si single crystal is the major raw material for Power Electronics device manufacturing, which output is around 6%~ 8% of total Si wafer market.
区熔（FZ）硅单晶是制作电力电子器件的主要原材料，产量大约占整个硅片市场6%～8%。 - Different ion exchange technics conditions are used to fabricate channel waveguide. The planar waveguide with single mode and three modes is fabricated on the other side of channel waveguide wafer. The problems in channel waveguide fabricated process are also introduced.
采用不同工艺条件对沟道波导进行了离子交换实验研究，并在含有沟道波导的基片背面成功制作出了有1个和3个模式的平板波导，增加了沟道波导制作成功的可能性。